Borland StarTeam Product Review.

TiB2 does not occur naturally in the earth. Titaniumdiboride powder can be prepared by a variety of high-temperaturemethods, such as the direct reactions of or its oxides/hydrides, withelemental over1000 °C, carbothermal reduction by of and , orhydrogen reduction of boron halides in the presence of the metal orits halides. Among various synthesis routes, electrochemicalsynthesis and solid state reactions have been developed to preparefiner titanium diboride in large quantity. An example of solidstate reaction is the borothermic reduction, which can beillustrated by the following reaction

Silicon boride synthesis essay - Michigan Media House

930409, Society of Automotive Engineers, Warrendale, PA, USA.[4] Borges, A.

08/12/1992 · The metal boride powder is produced by ..

SUBSTANCE: invention relates to structural materials operating in conditions of high thermal load and oxidative medium, and can be used in chemical and metallurgical industry, as well as aircraft engineering. The method involves making a carbon-plastic workpiece based on carbon fibre and thermoreactive binder, thermal treatment thereof until formation of a coke matrix reinforced with carbon fibres, subsequent compacting of the coke matrix via saturation with pyrolytic carbon and silicon impregnation. Saturation with pyrolytic carbon is carried out until achieving intermediate density of the carbon workpiece of 78-87% of the maximum apparent density of the carbon material, after which preliminary silicon impregnation at temperature 1500-1650°C and residual pressure 1-36 mm Hg is carried out, with subsequent distillation of free Si at temperature 1800-1850°C and residual pressure 1-36 mm Hg, and the material is then impregnated with coke binder, carbonised and subjected to final silicon impregnation using a vapour-phase technique.

Silicon boride | Boron | Mediander | Topics

SUBSTANCE: invention can be used in chemical industry and nanotechnology. The nano-film or nano-thread is obtained by depositing on a base - fluoroplastic fibre or film - a layer of boron or silicon with nano-thickness, which is then treated in carbon monoxide gas in the presence of coal or soot at temperature of 1400-1500°C. A silicon layer or a boron layer is the deposited on the formed layer of boron carbide or silicon carbide, respectively. The formed composition is held in a vacuum or in an atmosphere of an inert gas at temperature of 1400-1500°C and then at the same temperature in carbon monoxide gas in the presence of coal or soot. The base used can be corundum fibre or film.


Inorganic Chemistry (ACS Publications)

AB - Single-crystal iron silicon boron (Fe5Si2B) and iron boride (Fe3B) nanowires were synthesized by a chemical vapor deposition (CVD) method on either silicon dioxide (SiO2) on silicon (Si) or Si substrates without introducing any catalysts. FeI2 and BI3 were used as precursors. The typical size of the nanowires is about 5-50 nm in width and 1-20 μm in length. Different kinds of Fe-Si-B and Fe-B structures were synthesized by adjusting the ratio of FeI2 vapor to BI3 vapor. Single-crystal Fe5Si2B nanowires formed when the FeI2 sublimator temperature was kept in the range of 540-570 °C. If the FeI2 sublimator temperature was adjusted in the range of 430-470 °C, single-crystal Fe3B nanowires were produced. Fe3B nanowires grow from polycrystalline Fe 5SiB2 particles, while Fe5Si2B nanowires grow out of the Fe5Si2B layers, which are attached to triangle shaped FeSi particles. Both the ratio of FeI2 vapor to BI3 vapor and the formation of the particles (Fe 5SiB2 particles for the growth of Fe3B nanowires, FeSi particles for the growth of Fe5Si2B nanowires) are critical for the growth of Fe3B and Fe 5Si2B nanowires. The correct FeI2 vapor to BI3 vapor ratio assures the desired phase form, while the particles provide preferential sites for adsorption and nucleation of Fe3B or Fe5Si2B molecules. Fe3B or Fe 5Si2B nanowires grow due to the preferred growth direction of 〈110〉.

Sigma-Aldrich Online Catalog Product List: Borides

SUBSTANCE: invention relates to production of various types of metal-processing tools: cutters, millers, lapping tools, particularly production of sintered composite material made from cubic boron nitride powder. The method involves moulding cubic boron nitride powder and saturating the obtained moulded article with molten binder made from silicon and nickel at pressure of 20-40 kbar and temperature of 1200-1400°C, lying the range of stability of cubic boron nitride of a phase diagram. The amount of saturating material is equal to 10.0-25.0 wt %. The amount of nickel in the alloy with silicon is equal to 50-75 wt %.

Carbide, Nitride and Boride Material Synthesis ..

EFFECT: using a silicon and nickel alloy enables deeper saturation an article made from cubic boron nitride powder at sufficiently low pressure and obtain a composite material with high heat-resistance, heat-conductivity, wear-resistance and electroconductivity, which enables to use the material for make articles of the required dimensions and shape using simple methods such as electro-erosion machining.

Journal of the Brazilian Chemical Society ..

SUBSTANCE: inventions can be used in the field of nanotechnologies and inorganic chemistry. The method of production of boride nanofilm or nanowire comprises depositing on the alumina nanowire or on fiberglass of low-melting glass in vacuum the multiple alternating layers of titanium and boron, after which the resulting composition is gradually heated to a temperature of 1500°C. In another embodiment, the method of production of boride nanofilm comprises depositing of titanium boride layer of nanothickness on alumina nanofilm of the gas phase comprising titanium halogenide and boron.